Title : The effect of Zn doped TiO2 nanostructures and their photo-catalytic behavior prepared by sol-gel method
Nanostructures of Zn doped TiO2 thin films were prepared by sol-gel method deposited on a silicon substrate, the films were heated at a temperature from 400 ºC to 1000 ºC for 2 hours. The doped thin films were characterized using X-ray diffractometer (XRD), Raman spectroscopy, FTIR spectroscopy, scanning electron microscopy (SEM), Atomic force spectroscopy (AFM), Reflectance, and Photoluminescence spectroscopy (PL). It was determined that the films crystallize on anatase and ZnTiO3 phase at annealing temperature between 400°C and 600°C. At high temperature 800°C, 1000°C, we observed the complete transformation of anatase to rutile phase and in addition to ZnTiO3 phase, the Zn2TiO4 was appearing. Photoluminescence and reflectance results revealed that Zn doped TiO2 thin films had excellent optical properties, which enhance photocatalytic activity.